memory array 512 x 2048 package details pin count description package type 32 0.6" dual-in-line (dip) s 32 0.1" vertical-in-line (vil tm )v package details on pages 8 & 9. see page 9 for sx, vx pin functions a0-a16 address inputs d0-7 data input/output cs1 chip select 1 cs2 chip select 2 oe output enable we write enable nc no connect v cc power (+5v) gnd ground 128k x 8 sram f t 8128 - 55 / 70 /10/12 issue 1 j an ua r y 200 3 block diagram 131,072 x 8 cmos static ram features access times of 5 5/ 70 /100/120 ns jedec standard dual cs footprints. operating power 550 mw (max) low power standby (-l) 2.2 mw (max) low voltage data retention. completely static operation directly ttl compatible. may be processed in accordance with mil-std-883 description the f t 8128 is a 1mbit monolithic sram organised as 128k x 8. it is currently available in 2 standard formats, with access times of 55 , 70 , 100, 120ns. it has a low power standby version and has 3.0v battery backup capability. it is directly ttl compatible and has common data inputs and outputs. two pinout variants (single and dual cs) are available. all versions may be screened in accordance with mil-std-883. f orc e tec hno logi es l td , as hle y c ourt , he nl y, mar lb oro ugh , wi lts hi re sn 8 3r h , england t el. +44 (0)1264 712000 fax. +44 (0)1264 731444 pin definition nc a5 a4 a6 a3 a7 a12 a14 a16 a2 a1 a0 gnd d2 d1 d0 vcc a9 a11 a8 oe a13 we cs2 a15 a10 cs1 d7 d3 d4 d5 d6 32 26 25 27 24 28 29 30 31 23 22 21 17 18 19 20 1 7 8 6 9 5 4 3 2 10 11 12 16 15 14 13 top view s,v
f t 8128 2 absolute maximum ratings voltage on any pin relative to v ss v t -0.5v to +7.0 v power dissipation p t 1w storage temperature t stg -55 to +150 o c notes : (1) stresses above those listed may cause permanent damage to the device. this is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. recommended operating conditions min t y p max supply voltage v cc 4.5 5.0 5.5 v input high voltage v ih 2.2 - 5.8 v input low voltage v il -0.3 - 0.8 v operating temperature t a 0-70 o c t ai -40 - 85 o c ( i suffix) t am -55 - 125 o c ( m , mb suffix) dc operating conditions capacitance (v cc =5v10%,t a =25 o c) parameter symbol test condition t y p max unit i/p capacitance c in v in =0v - 8 pf i/o capacitance c i/o v i/o =0v - 10 pf note: this parameter is not 100% tested. dc electrical characteristics (v cc = 5.0v10%, t a =-55c to +125c) parameter symbol test condition min t y p max unit input leakage current i li v ih =0v to v cc -1 - 1 a output leakage current i l/o cs1=v ih , cs2 =v il , v i/o =0v to v cc ,oe=v ih -1 - 1 a average supply current i cc1 min. cycle, v in =v il or v ih - - 100 ma standby supply current i sb1 cs1=v ih ,cs2 = v il , i/p's static --3ma -l part i sb2 cs1 ? ? v cc -0.2v, 0.2v ? ? cs2 ? ? v cc -0.2v , v in ? ? 0.2v - - 400 ua output voltage v ol i ol = 2.1 ma - - 0.4 v v oh i oh = -1.0 ma 2.4 - - v
msm8128 3 operating modes the table below shows the logic inputs required to control the f t 8128 sram. mode cs1 cs2 oe w e v cc current i/o pin reference cycle not selected 1 x x x i sb1 ,i sb2 high z p ower down not selected x 0 x x i sb ,i sb1 high z p ower down output disable 0 1 1 1 i cc high z read 0 1 0 1 i cc d out read cycle write 0 1 x 0 i cc d in write cycle 1 = v ih ,0 = v il , x = don't care low v cc data retention characteristics - l version only (t a =-55 c to +125 o c) parameter symbol test condition min typ max unit v cc for data retention v dr cs1 ? ? v cc -0.2v, cs2 ? ? v cc -0.2v or 0v ? ? cs2 0.2v. v in ? ? 0v 2.0 - - v data retention current i ccdr v cc =3.0v,v in ? ? 0v, cs1 ? ? v cc -0.2v, cs2 ? ? v cc -0.2v or 0v ? ? cs2 0.2v. - - 600 a chip deselect to data retention t cdr see retention waveform 0--ns operation recovery time t r see retention waveform 5--ms notes (1) cs2 controls address buffer, we buffer, cs1 buffer and oe buffer. if cs2 controls data retention mode, vin levels (we,oe,cs1,i/o) can be in the high impedance state. if cs1 controls data retention mode, cs2 must be ? ? v cc - 0.2v or 0v ? ? cs2 ? ? 0.2v. the other input levels (address, we,oe,i/o) can be in the high impedance state. ac test conditions output load * input pulse levels: 0v to 3.0v * input rise and fall times: 5ns * input and output timing reference levels: 1.5v * output load: see load diagram * v cc =5v10% 166 30pf i/o pin 1.76v ?
msm8128 4 ac operating conditions read cycle 55 70 10 12 parameter symbol min max min max min max min max unit read cycle time t rc 55 - 70 - 100 - 120 - n s address access time t aa - 55 - 7 0 - 100 - 120 n s chip select (cs1) access time (2) t acs1 - 55 - 70 - 100 - 120 n s chip select (cs2) access time (2) t acs2 - 55 - 70 - 100 - 120 n s output enable to output valid t oe - 2 5 - 3 5-50-60ns output hold from address change t oh 5-5-10-10-ns chip selection (cs1) to output in low z t clz1 10 - 1 0 - 10 - 1 0 - n s chip selection (cs2) to output in low z t clz2 10 - 1 0 - 10 - 1 0 - n s output enable to output in low z t olz 5-5-5-5-ns chip disable (cs1) to output in high z (3) t chz1 0 2 5035035045ns chip disable (cs2) to output in high z (3) t chz2 0 2 5035035045ns output disable to output in high z (3) t ohz 0 2 0030035045ns write cycle 55 70 10 12 parameter symbol min max min max min max min max unit write cycle time t wc 55 - 70 - 100 - 120 - n s chip selection to end of write t cw 45 - 60 - 85 - 100 - n s address valid to end of write t aw 5 0 - 60 - 85 - 100 - n s address setup time t as 0-0-0-0-ns write pulse width t wp 4 0 - 5 0 - 70 - 7 0 - n s write recovery time (we, cs1) t wr1 5-5-5-5-ns (cs2) t wr2 5-5-5-5-ns write to output in high z t whz 030030035040ns data to write time overlap t dw 25 - 3 0 - 40 - 4 5 - n s data hold from write time t dh 0-0-0-0-ns output active from end of write t ow 5 - 5 - 5 - 5 - ns
msm8128 5 notes: (1) we is high for read cycle. (2) address valid prior to or coincident with cs1 transition low or cs2 high. (3) t chz and t ohz are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage levels. at any given temperature and voltage condition, t chz max is less than t clz min both for a given device and from device to device. this parameter is sampled and not 100% tested. read cycle timing waveform (1,2 ) t t t t rc aa oe oh address oe cs1 data valid t t acs2 (2) t clz2 ohz (3) t chz2 (3) dout t olz t acs1 (2) t clz1 t chz1 (3) cs2
msm8128 6 write cycle no.1 timing waveform t t t t wc as (3) aw address cs1 t t t wp(1) dw dh we din t wr1,2 (2) high - z data valid oe (6) ohz(3,9) t dout cs2 (6) cw (4) t wr1,2 (2) cs1 t cw (4) t t t wp (1) dw dh we dout din t as (3) t aw t wc address high - z data valid (6) t whz(3,9) high - z t ow t oh (7) (8) (6) cs2 write cycle no.2 timing waveform (5)
msm8128 7 low v cc data retention timing waveform 1 (cs1 controlled) low v cc data retention timing waveform 2 (cs2 controlled) t r t cdr 4.5v 2.2v 4.5v 2.2v 0v data retention mode vcc cs1 v dr cs1 vcc-0.2v 4.5v 4.5v 0v data retention mode vcc cs2 v dr2 0.4v t r t cdr cs2 0.2v ac characteristics notes (1) a write occurs during the overlap of a low cs1, a high cs2 and a low we. a write begins at the latest transition among cs1 going low, cs2 going high and we going low. a write ends at the earliest transition among cs1 going high, cs2 going low and we going high. t wp is measured from the beginning of write to the end of write. (2) t wr is measured from the earlier of cs1 or we going high or cs2 going high to the end of write cycle. (3) during this period, i/o pins are in the output state. input signals out of phase must not be applied. (4) if cs1 goes low simultaneously with we going low or after we going low, outputs remain in high impedance state. (5) oe is continuously low. (oe=v il ) (6) dout is in the same phase as written data of this write cycle. (7) dout is the read data of next address. (8) if cs1 is low and cs2 is high during this period, i/o pins are in the output state. input signals out of phase must not b e applied to i/o pins. (9) t whz is defined as the time at which the outputs achieve the open circuit conditions and is not referenced to output voltage levels. these parameters are sampled and not 100% tested.
msm8128 8 package details all dimensions in mm (inches). 32 pin 0.6" dual-in-line (dip) - 's' package 0.51 (0.020) 2.54 (0.100) 3.18 (0.125) 0.41 (0.016) 11.43 (0.450) 10.41 (0.410) 2.67 (0.105) 41.02 (1.615) 40.26 (1.585) 2.67 (0.105) 4.00 (0.157) 3.00 (0.117) 1.54 (0.060) 1.02 (0.040) 2.41 (0.095) 4.00 (0.157) 3.00 (0.117) 1.52 (0.060) 1.02 (0.040) 2.67 (0.105) 0.51 (0.020) 0.41 (0.016) 2.41 (0.095) 4.30 (0.170) 3.30 (0.130) 15.56 (0.610) 15.05 (0.590) 41.05 (1.615) 40.26 (1.585) 32 pin 0.1" vertical-in-line (vil tm ) - 'v' package
msm8128 9 military screening procedure component screening flow for high reliability product is in accordance with mil-883 method 5004 visual and mechanical internal visual 2010 condition b or manufacturers equivalent 100% temperature cycle 1010 condition c (10 cycles,-65 o c to +150 o c) 100% constant acceleration 2001 condition e (y, only) (30,000g) 100% pre-burn-in electrical per applicable device specifications at t a =+25 o c 100% burn-in method 1015,condition d,t a =+125 o c,160hrs min 100% final electrical tests per applicable device specification static (dc) a) @ t a =+25 o c and power supply extremes 100% b) @ temperature and power supply extremes 100% functional a) @ t a =+25 o c and power supply extremes 100% b) @ temperature and power supply extremes 100% switching (ac) a) @ t a =+25 o c and power supply extremes 100% b) @ temperature and power supply extremes 100% percent defective allowable (pda) calculated at post-burn-in at t a =+25 o c 5% hermeticity 1014 fine condition a 100% gross condition c 100% external visual 2009 per vendor or customer specification 100% screen test method level mb component screening flow alternate pin definition nc a5 a4 a6 a3 a7 a12 a14 a16 a2 a1 a0 gnd d2 d1 d0 vcc a9 a11 a8 oe a13 we nc a15 a10 cs d7 d3 d4 d5 d6 32 26 25 27 24 28 29 30 31 23 22 21 17 18 19 20 1 7 8 6 9 5 4 3 2 10 11 12 16 15 14 13 top view vx,sx
msm8128 10 although this data is believed to be accurate the information contained herein is not intended to and does not create any warranty of merchantibility or fitness for a particular purpose. our products are subjected to a constant process of development. data may be changed at any time without notice. products are not authorised for use as critical components in life support devices without the express written approval of a company director. ft 8128slmb - 55 speed 55 = 55 n s 70 = 70 ns 10 = 100 ns 12 = 120 ns temp. range/screening blank = commercial 55 / 70 / 100 / 12 0 i = industrial 55 / 7 0 / 100 /1 20 m = military 70 / 100 / 12 0 mb = screened in accordance with mil-std-883. power consumption blank = standard power l = low power package s = 32 pin 0.6" dip v = 32 pin 0.1" vil sx = 32 pin 0.6" dip (single cs) vx = 32 pin 0.6" vil (single cs organisation 8128 = 128k x 8 sram ordering information
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